Method for forming a semiconductor sensor

Details Method for forming a semiconductor sensor Method for forming a semiconductor sensor

1993-10-26

1996-01-16

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437228, 437927, 437974, 437901, 148DIG12, 148DIG159, H01L 2720

Patent

active

054847451

ABSTRACT:
A method for forming at least one corrugation member in a semiconductor material, contains the step of: forming a semiconductor material layer onto a substrate, masking a first surface of the semiconductor material, etching the first surface to form first cavity thereon, removing a mask from the semiconductor material, masking the first surface and second surface of the semiconductor material, etching the second surface to form second cavity thereon, the second cavity being defined into the first cavity, removing the mask from the semiconductor material, depositing a specified masking material selected in accordance with a characteristic of the substrate onto the semiconductor material, etching an unmasked portion of the semiconductor material and depositing the same material as the abovementioned specified masking material selected in accordance with a characteristic of the substrate onto the semiconductor material and the specified masking material which has been deposited onto the semiconductor to form the corrugation member.

REFERENCES:
patent: 4618397 (1986-10-01), Shimizu et al.
patent: 4808549 (1989-02-01), Mikkor et al.
patent: 5062302 (1991-11-01), Petersen et al.
patent: 5161532 (1992-11-01), Joseph
patent: 5169599 (1992-12-01), Joseph et al.
patent: 5209118 (1993-05-01), Terman
patent: 5257546 (1993-11-01), Tobita et al.

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