Method for forming a semiconductor on insulator device

Details Method for forming a semiconductor on insulator device Method for forming a semiconductor on insulator device

1993-01-04

1995-07-25

Fourson, George

Fishing, trapping, and vermin destroying

437 86, 437974, 437180, 148DIG12, 148DIG50, 148DIG135, 257502, 257508, H01L 21265

Patent

active

054361737

ABSTRACT:
A method for forming a semiconductor on insulator device is provided that begins with an outer semiconductor layer (16). Trenches (12) of a predetermined depth are formed in outer semiconductor layer (16). An insulator layer (20) is formed outwardly from outer semiconductor layer (16). A mesa (18a) having a predetermined thickness is formed by removing portions of outer semiconductor layer (16) to expose a working surface such that mesa (18a) has a thickness substantially equal to the predetermined depth of the trenches (12) after the working surface is exposed.

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