Method for forming a semiconductor light-emitting device

Details Method for forming a semiconductor light-emitting device Method for forming a semiconductor light-emitting device

2011-08-16

2011-08-16

Malsawma, Lex (Department: 2892)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Mesa formation

C438S040000, C438S041000, C438S164000, C438S343000, C257S080000, C257S618000, C257S623000

Reexamination Certificate

active

07998770

ABSTRACT:
A semiconductor light-emitting device with a new layer structure is disclosed, where the current leaking path is not caused to enhance the current injection efficiency within the active layer. The device provides a mesa structure containing active layer and a p-type lower cladding layer on a p-type substrate and a burying layer doped with iron (Fe) to bury the mesa structure, where the burying layer shows a semi-insulating characteristic. The device also provides an n-type blocking layer arranged so as to cover at least a portion of the p-type buffer lower within the mesa structure. The n-type blocking layer prevents the current leaking from the burying layer to the p-type buffer layer, and the semi-insulating burying layer that covers the rest portion of the mesa structure not covered by the n-type blocking layer prevents the current leaking from the n-type blocking layer to the n-type cladding layer within the mesa structure.

REFERENCES:
patent: 5470785 (1995-11-01), Kondo
patent: 6955994 (2005-10-01), Watanabe et al.
patent: 7701993 (2010-04-01), Iga et al.
patent: 7720123 (2010-05-01), Takiguchi et al.
patent: 7772023 (2010-08-01), Hiratsuka
patent: 06-085390 (1994-03-01), None

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