Method for forming a semiconductor device with trench isolation

Details Method for forming a semiconductor device with trench isolation Method for forming a semiconductor device with trench isolation

1987-09-11

1988-04-26

Ozaki, George T.

Fishing, trapping, and vermin destroying

437 41, 437 67, 357 49, H01L 21473

Patent

active

047404809

ABSTRACT:
Formation of an integrated circuit device with the trench isolation process is disclosed. A plurality of circuit elements such as transistors are isolated from one another by trenches formed in field isolation regions of a semiconductor substrate. Each trench should be filled with appropriate materials to maintain the flatness of the surface of the substrate. Borophosphosilicate glass (BPSG) is employed as the material filled into each trench.

REFERENCES:
patent: 4307180 (1981-12-01), Pogge
patent: 4404735 (1983-09-01), Sakurai
patent: 4419813 (1983-12-01), Iwai
patent: 4449287 (1984-05-01), Maas et al.
patent: 4463493 (1984-08-01), Momose
patent: 4506435 (1985-03-01), Plisken
patent: 4611386 (1986-09-01), Goto
Kern et al., RCA Review, vol. 43, No. 3, Sep. 1982, pp. 423-457.

Affiliated with

Also associated with

Rating

Method for forming a semiconductor device with trench isolation does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming a semiconductor device with trench isolation , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a semiconductor device with trench isolation will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-819479