Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Patent
1998-08-17
1999-11-16
Nguyen, Tuan H.
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
438250, 438393, H01L 2120
Patent
active
059857315
ABSTRACT:
A method of forming a stacked capacitor structure in a semiconductor device, having metal electrode plates. After depositing the bottom electrode layer (26) and the dielectric layer (28) of the capacitor, a rough patterning step is carried out to roughly pattern or shape the bottom electrode layer and the dielectric layer, and to expose the underlying interlayer dielectric (18). A top electrode layer (32) is then blanket deposited, and another, more precise etching step is carried out to form the final shape of the capacitor element, while leaving behind a portion of the top electrode layer on the interlayer dielectric, which forms a metal interconnect (36). In one embodiment, the electrode layers are comprised of materials having a conductivity greater than doped silicon (either poly or monocrystalline), such as a metal.
REFERENCES:
patent: 4638400 (1987-01-01), Brown et al.
patent: 5065220 (1991-11-01), Paterson et al.
patent: 5109357 (1992-04-01), Eaton, Jr.
patent: 5119154 (1992-06-01), Gnadinger
patent: 5185689 (1993-02-01), Maniar
patent: 5196909 (1993-03-01), Chan et al.
patent: 5300799 (1994-04-01), Nakamura et al.
patent: 5381302 (1995-01-01), Sandhu et al.
patent: 5479316 (1995-12-01), Smrtic et al.
patent: 5576240 (1996-11-01), Radosevich et al.
Ganger Jeffrey D.
Lin Der-Gao
Lohn Christopher Sterling
Weng Kenneth Chia-Kun
Wu Kevin Yun-kang
Motorola Inc.
Nguyen Tuan H.
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