Method for forming a semiconductor device

Details Method for forming a semiconductor device Method for forming a semiconductor device

1994-06-06

1995-06-06

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 41, 437 70, H01L 2170

Patent

active

054222974

ABSTRACT:
A method for forming a semiconductor device comprising steps of: (i) depositing an oxide film and then an anti-oxide film on a semiconductor substrate of a first conductive type, (ii) removing the anti-oxide film provided in a prescribed region where a field oxide film is to be formed, followed by forming a resist on the semiconductor substrate including the anti-oxide film in a prescribed region where a buried bit line is to be formed, (iii) implanting ions of a second conductive type to the semiconductor substrate using the oxide film and the resist as a mask, (iv) forming the field oxide film in the prescribed region by LOCOS method, followed by forming a gate electrode on the semiconductor substrate, (v) implanting ions of the second conductive type to the semiconductor substrate using the gate electrode as a mask and subjecting the resulting semiconductor substrate to a thermal treatment, thereby forming a source/drain region to which the buried bit line is connected.

REFERENCES:
patent: 4170492 (1979-10-01), Bartlett et al.
patent: 5118641 (1992-06-01), Roberts
patent: 5134085 (1992-07-01), Gilgen et al.
patent: 5314832 (1994-05-01), Deleonibus

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