Method for forming a semiconductor device

Details Method for forming a semiconductor device Method for forming a semiconductor device

2008-02-22

2010-12-21

Zameke, David A (Department: 2891)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C257SE21540

Reexamination Certificate

active

07855124

ABSTRACT:
A method for forming a semiconductor device, includes the steps of providing a substrate; forming a patterned stack on the substrate including a first dielectric layer on the substrate, a first conductive layer on the first dielectric layer and a mask layer on the first conductive layer, wherein a width of the mask layer is smaller than a width of the first conductive layer; forming a second dielectric layer on the sidewall of the patterned stack; forming a third dielectric layer on the substrate; forming a second conductive layer over the substrate; and removing the mask layer and a portion of the first conductive layer covered by the mask layer to form an opening so as to partially expose the first conductive layer.

REFERENCES:
patent: 6153471 (2000-11-01), Lee et al.
patent: 2005/0064666 (2005-03-01), Kim
patent: 2005/0156225 (2005-07-01), Ahn et al.
patent: 2008/0090354 (2008-04-01), Baek et al.
patent: 2008/0265304 (2008-10-01), Lee et al.
patent: 2009/0011588 (2009-01-01), Kim

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