Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2005-10-18
2005-10-18
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
Reexamination Certificate
active
06955973
ABSTRACT:
A metal film containing a metal is formed on a silicon layer, and then a surface portion of the silicon layer and the metal film are oxidized so as to form a silicon oxide film containing the metal in a surface portion of the silicon layer.
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