Method for forming a semiconductor device

Details Method for forming a semiconductor device Method for forming a semiconductor device

2000-01-03

2001-05-15

Gorgos, Kathryn (Department: 1741)

Electrolysis: processes, compositions used therein, and methods

Electrolytic coating

Involving measuring, analyzing, or testing

C205S084000, C205S082000, C205S081000, C205S096000, C438S017000

Reexamination Certificate

active

06231743

ABSTRACT:

FIELD OF THE INVENTION
The present invention relates generally to methods for depositing films on a substrate, and more particularly, to methods for electroplating films on semiconductor device substrates.
BACKGROUND OF THE DESCRIPTION
Plating as a method of forming films on substrates is becoming increasingly common in semiconductor manufacturing. More specifically, electroplating is becoming recognized as a cost-effective method for forming conductive films, such as copper on semiconductor substrates.
FIG. 1
includes a cross-sectional view illustrating portions of a plating system
10
. The plating system
10
includes a chamber
11
, a plating solution
19
, a plating solution inlet
111
and a plating solution outlet
113
, a cup
12
, a ring thief
17
, a diffuser
13
, an anode
14
, a cathode
15
, and a substrate
155
coupled to the cathode
15
. The cathode
15
additionally includes a turntable assembly
151
and clamps
153
. During operation of the of the plating system
10
, current flows through the plating solution between the anode
14
(positive electrode) and the cathode
15
(negative electrode), and metal ions in the solution are reduced to metal atoms that deposit onto the substrate
15
. At the anode, an oxidation reaction occurs that replenishes the plating solution with metal ions reduced at the cathode.
Currently, no commercially viable methods exist for measuring the plating solution's current density. A pH probe can measure the concentration of ionic species in the plating bath, however, it cannot measure current density. A current measuring probe can manually be manipulated within the plating solution, but this method has disadvantages. First, the probe measures only specific singular locations within the plating solution. These points correspond to only small areas of the substrate. Second, the probe cannot be used when processing production substrates because it interferes with and undesirably impacts the plating deposition process. Therefore, this prior art method is capable of only being used with non-production (dummy) wafers. Finally, because the probe is continually being removed and reintroduced into the bath, particle generation may be of concern. Particles and contaminants introduced by the probe can cause a number of problems that degrade the quality of the plated film.


REFERENCES:
patent: 2751340 (1956-06-01), Schaefer et al.
patent: 2859166 (1958-11-01), Grigger
patent: 3880725 (1975-04-01), Vel Raalte et al.
patent: 4148707 (1979-04-01), Mayer et al.
patent: 4304641 (1981-12-01), Grandia et al.
patent: 4420382 (1983-12-01), Riedl
patent: 4421627 (1983-12-01), LeBaron
patent: 4466864 (1984-08-01), Bacon et al.
patent: 4678545 (1987-07-01), Galik
patent: 4720329 (1988-01-01), Sirbola
patent: 4879007 (1989-11-01), Wong
patent: 4882537 (1989-11-01), Silverman
patent: 5084153 (1992-01-01), Mosse et al.
patent: 5135636 (1992-08-01), Yee et al.
patent: 5149419 (1992-09-01), Sexton et al.
patent: 5230743 (1993-07-01), Thompson et al.
patent: 5312532 (1994-05-01), Andricacos et al.
patent: 5332487 (1994-07-01), Young, Jr. et al.
patent: 5582708 (1996-12-01), Delfrate et al.
patent: 5620581 (1997-04-01), Ang
patent: 5739692 (1998-04-01), Subda, Jr.
patent: 195 47 948 C1 (1996-12-01), None
patent: 500 513 A1 (1992-08-01), None
patent: 0 666 343 A1 (1995-08-01), None
patent: 2 089 838 (1982-06-01), None
patent: 1009157 (1998-11-01), None
patent: WO 87/07654 (1987-12-01), None
F.A. Lowenheim, Electroplating, McGraw Hill Book Co., New york, pp. 152-155, 160-163, 363-377, 1978.*
R.H. Rousselot, “Current-Distribution Improving Aids”, Metal Finishing, pp. 57-53, Mar. 1961.*
Database WPI, Section Ch, Week 7946, Derwent Publications Ltd., London, GB; AN 79-83249B, XP002110736 & JP 54 128945 A (Sumitomo Metal Ind Ltd), Oct. 5, 1979 Abstract.
Rousselot, “Current-Distribution Imroving Aids,” Metal Finishing, pp. 57-63 (1961).

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