Method for forming a self-aligned schottky barrier device guardr

Details Method for forming a self-aligned schottky barrier device guardr Method for forming a self-aligned schottky barrier device guardr

1976-12-27

1977-12-20

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

357 15, 427 84, H01L 21265

Patent

active

040639649

ABSTRACT:
The method allows the formation of a self-aligned guardring surrounding a Schottky barrier device. The resulting guardring is as close to the Schottky barrier device as is possible. This reduces the area of the chip used by other guardring forming techniques of the prior art. The method involves first opening a hole in an insulator to expose the silicon surface. The Schottky barrier forming metal is then deposited over the insulator and the silicon surface. Heat treatment of the appropriate temperature and time is utilized to form the metal silicide Schottky barrier device. During this device formation, there is a volume shrinkage in the metal silicide which forms a narrow annulus of exposed silicon around the metal silicide contact. The unreacted metal is removed. Ion implantation of ion of opposite polarity to the exposed silicon is imparted to the structure to form a guardring surrounding the Schottky barrier device.

REFERENCES:
patent: 3669730 (1972-06-01), Lepselter
W. D. Buckley et al., "Structure . . . . Pd.sub.2 Si contacts on . . . Si and diffused P-N diodes" Solid Sta. Electronics, 15, (1972), 1331.
R. J. Baughman et al., "Prep., . . . Growth . . . of PtSi and PtGe", Mat. Res. Bull. 7, (1972), 1035.

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