Method for forming a scribe line on a semiconductor device...

Details Method for forming a scribe line on a semiconductor device... Method for forming a scribe line on a semiconductor device...

2006-03-21

2006-03-21

Thai, Luan (Department: 2891)

Semiconductor device manufacturing: process

Semiconductor substrate dicing

C438S462000, C438S114000, C438S458000, C438S113000, C257S620000

Reexamination Certificate

active

07015118

ABSTRACT:
A silicon wafer50including a plurality of semiconductor devices patterned on a top surface thereof as a result of a wafer production process is prepared. A transparent film is applied on the top surface of the semiconductor wafer50so as to cover all the plurality of semiconductor devices. The semiconductor wafer with the transparent film is placed on a rotatable table26such that a rear surface of the semiconductor wafer not covered with the transparent film is facing up away from the rotatable table26.The rear surface of the semiconductor wafer50is heated with a laser beam to form a laser spot, along a scribe line formation line for dividing the semiconductor wafer into a plurality of semiconductor chips, to a temperature lower than a softening point of the semiconductor wafer, while an area close to the laser spot is continuously cooled along the scribe line formation line.

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patent: 02/22301 (2002-03-01), None

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