Semiconductor device manufacturing: process – Making conductivity modulation device
Reexamination Certificate
2006-09-05
2006-09-05
Lebentritt, Michael (Department: 2824)
Semiconductor device manufacturing: process
Making conductivity modulation device
C438S090000, C438S092000, C438S531000
Reexamination Certificate
active
07101739
ABSTRACT:
A method for manufacturing a vertical Schottky diode with a guard ring on a lightly-doped N-type silicon carbide layer, including forming a P-type epitaxial layer on the N-type layer; implanting N-type dopants in areas of the P-type epitaxial layer to neutralize in these areas, across the entire thickness of the epitaxial layer, the P-type dopants to form N-type regions, of dopant concentration lower than that of the epitaxial layer, and delimiting a P-type guard ring; forming on the external periphery of the component an insulating layer partially covering the guard ring; and forming a Schottky contact with the N-type region internal to the guard ring.
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French Search Report from French Patent Application No. 01/15026, filed Nov. 21, 2001.
Jorgenson Lisa K.
Lebentritt Michael
Morris James H.
STMicroelectronics S.A.
Wolf Greenfield & Sacks P.C.
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