Method for forming a reverse dielectric stack

Details Method for forming a reverse dielectric stack Method for forming a reverse dielectric stack

1995-09-25

1998-01-27

Niebling, John

Fishing, trapping, and vermin destroying

437 43, 437239, 437242, H01L 218247, H01L 21316

Patent

active

057121770

ABSTRACT:
An embodiment of the invention allows the reversing of the sequence of a stacked gate dielectric layer so that a thermal oxide overlies a CVD deposited oxide. A CVD dielectric (12) is first deposited to a desired thickness. Then a layer of silicon (16), either amorphous or polycrystalline, is deposited overlying the CVD dielectric, wherein this silicon layer is approximately one-half of the desired thickness of the final top oxide. The silicon layer is then thermally oxidized to form thermal oxide (18). This method of the invention allows the denser thermal oxide to be formed overlying the less dense CVD dielectric layer as desired to form a reverse dielectric stack.

REFERENCES:
patent: 4179311 (1979-12-01), Athanas
patent: 4722909 (1988-02-01), Parrillo et al.
patent: 4745086 (1988-05-01), Parrillo et al.
patent: 4748133 (1988-05-01), Griswold
patent: 4851370 (1989-07-01), Doklan et al.
patent: 5104819 (1992-04-01), Freiberger et al.
patent: 5189501 (1993-02-01), Kawamura et al.
patent: 5258333 (1993-11-01), Shappir et al.
patent: 5275960 (1994-01-01), Yamaguchi et al.
patent: 5298447 (1994-03-01), Hong
patent: 5304829 (1994-04-01), Mori et al.
patent: 5319229 (1994-06-01), Shimoji et al.
patent: 5330924 (1994-07-01), Huang et al.
patent: 5330938 (1994-07-01), Camerlenghi
patent: 5362632 (1994-11-01), Mathews
patent: 5371026 (1994-12-01), Hayden et al.
patent: 5376593 (1994-12-01), Sanddhu et al.
patent: 5393683 (1995-02-01), Mathews et al.
patent: 5407870 (1995-04-01), Okada et al.
patent: 5429966 (1995-07-01), Wu et al.
patent: 5464792 (1995-11-01), Tseng et al.
patent: 5470611 (1995-11-01), Yang et al.
"A Comparison of CVD Stacked Gate Oxide and Thermal Gate Oxide for 0.5.mu.m Transistors Subjected to Process-Induced Damage," IEEE Trans. on Electron Devices, vol. 40, No. 3, Mar. '93.

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