Chemistry of inorganic compounds – Silicon or compound thereof – Oxygen containing
Reexamination Certificate
2005-05-31
2005-05-31
Pham, Long (Department: 2814)
Chemistry of inorganic compounds
Silicon or compound thereof
Oxygen containing
C501S012000, C501S080000, C501S133000, C438S778000, C257SE21271, C257SE21273
Reexamination Certificate
active
06899857
ABSTRACT:
A method for forming a region of low dielectric constant nanoporous material is disclosed. In one embodiment, the present method includes the step of preparing a microemulsion. The method of the present embodiment then recites applying the microemulsion to a surface above which it is desired to form a region of low dielectric constant nanoporous material. Next, the present method recites subjecting the microemulsion, which has been applied to the surface, to a thermal process such that the region of low dielectric constant nanoporous material is formed above the surface.
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Chan Lap
Kong Siew Yong
Pheng Soo Choi
See Alex
Yang Wang Cui
Chartered Semiconductors Manufactured Limited
Pham Long
Rao Shrinivas
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