Method for forming a redistribution layer in a wafer structure

Details Method for forming a redistribution layer in a wafer structure Method for forming a redistribution layer in a wafer structure

2007-04-03

2008-09-02

Geyer, Scott B. (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Bump leads

Reexamination Certificate

active

07420274

ABSTRACT:
A method for forming a redistribution layer in a wafer structure, including (a) providing a wafer having a plurality of conductive structures and a first passivation layer thereon, wherein the first passivation layer covers the wafer except the conductive surfaces of the conductive structures; (b) forming a second passivation layer over the first passivation layer; (c) selectively removing part of the second passivation layer to form a plurality of grooves corresponding to a predetermined circuit; (d) forming a redistribution layer in the grooves; and (e) forming a third passivation layer over the second passivation layer and the redistribution layer. As a result, the redistribution layer is “embedded” in the second passivation layer so as to avoid the delamination of the redistribution layer.

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Peter Van Zant, “Microchip Fabrication”, 2004, McGraw Hill, 5th edition, pp. 412.413.

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