Method for forming a redistribution layer in a wafer structure

Details Method for forming a redistribution layer in a wafer structure Method for forming a redistribution layer in a wafer structure

2007-05-22

2007-05-22

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Assembly of plural semiconductive substrates each possessing...

C257SE27137

Reexamination Certificate

active

11099172

ABSTRACT:
The present invention relates to a method for forming a redistribution layer in a wafer structure. The method comprises: (a) providing a wafer having a plurality of conductive structures and a first passivation layer thereon, wherein the first passivation layer covers the wafer except the conductive surfaces of the conductive structures; (b) forming a second passivation layer over the first passivation layer; (c) selectively removing part of the second passivation layer to form a plurality of grooves corresponding to a predetermined circuit; (d) forming a redistribution layer in the grooves; and (e) forming a third passivation layer over the second passivation layer and the redistribution layer. As a result, the redistribution layer is “embedded” in the second passivation layer so as to avoid the delamination of the redistribution layer.

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Peter Van Zant, “Microchip Fabrication”, 2004, , McGraw Hill, 5thedition, pp. 412-413.

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