Method for forming a recess-free buffer layer

Details Method for forming a recess-free buffer layer Method for forming a recess-free buffer layer

1998-06-03

2000-10-24

Niebling, John F.

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438404, 438428, 438436, 438760, 438781, H01L 2176, H01L 21469

Patent

active

06136665&

ABSTRACT:
A recess-free buffer layer is formed on a semiconductor substrate having island structures formed thereon. A first buffer layer is formed over the substrate and the island structures. A first reflow process is then performed for reflowing the first buffer layer into spaces between the island structures. A portion of the first buffer layer located outside the spaces is removed. A second buffer layer is formed over the first buffer layer and the island structures. The method can further include a step of performing a second thermal soft-bake process to the second buffer layer. The second buffer layer can also be patterned after the soft-bake process.

REFERENCES:
patent: 4665007 (1987-05-01), Cservak et al.
patent: 4799992 (1989-01-01), Rao et al.
patent: 5302548 (1994-04-01), Watanabe et al.
patent: 5656556 (1997-08-01), Yang

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