Method for forming a polysilicon to polysilicon capacitor

Details Method for forming a polysilicon to polysilicon capacitor Method for forming a polysilicon to polysilicon capacitor

1989-12-13

1991-08-06

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 47, 437 60, 437191, 437193, 437233, 437235, 437919, 357 236, 357 51, H01L 2170

Patent

active

050377728

ABSTRACT:
A first polysilicon layer (18) is initially deposited onto a layer of field oxide (16). A dielectric (26) is formed on a portion of the first polysilicon layer (18). A second polysilicon layer (28) is deposited over the dielectric (26) and the first polysilicon layer (18). After the selective deposition of a mask (30) on to the second polysilicon layer (28), the polysilicon layers (18, 28) are anistropically etched to form a polysilicon to polysilicon capacitor (34) and a contact (36) of the capacitor (34). The dielectric (26) functions as an insulator for the capacitor (34) and as a barrier during anisotropic etching for protecting the underlying polysilicon layer (18).

REFERENCES:
patent: 4403394 (1983-08-01), Shepard et al.
patent: 4855801 (1989-08-01), Kuesters

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