Method for forming a polyoxide film on doped polysilicon by anod

Electrolysis: processes – compositions used therein – and methods – Electrolytic coating – Forming nonmetal coating using specified waveform other than...

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205108, 205124, 205157, 205220, 205229, C25D 518

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active

060398574

ABSTRACT:
The present invention relates to a method for forming a polyoxide film on a doped polysilicon layer, which is suitable for use as an inter-polysilicon polyoxide film between a doped polysilicon floating gate and a doped polysilicon control gate. The method includes conducting an electrolytic reaction at a room, temperature such that a polyoxide layer is formed on a doped polysilicon layer acting as an anode. The polyoxide layer is preferably further subjected with a rapid thermal processing to improve its electrical characteristics.

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