Method for forming a polycrystalline monolayer

Details Method for forming a polycrystalline monolayer Method for forming a polycrystalline monolayer

1986-10-14

1988-04-05

Weisstuch, Aaron

Fishing, trapping, and vermin destroying

437967, 437247, 437249, 136258PC, 136260, 136258, 427 74, 427 87, 427190, 427194, 427359, H01L 3118

Patent

active

047359099

ABSTRACT:
Improved techniques are provided for forming a very thin polycrystalline layer of a semiconductor material on a glass substrate. The film material may be formed from a slurry of a semiconductor powder and a liquid carrier, and the slurry economically applied at room temperature by spraying techniques. Once dried, the film is compressed by the application of a substantial mechanical force. The compressed film is regrown in a heated atmosphere, forming a polycrystalline film comprised of large mean diameter crystals, with many crystals having a mean diameter in excess of the film thickness. A high quality cadmium sulfide polycrystalline film suitable for forming a photovoltaic cells may be inexpensively manufactured according to these techniques.

REFERENCES:
patent: 4362896 (1982-12-01), Singh
patent: 4609567 (1986-09-01), Toth et al.

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