Method for forming a plug and semiconductor device having the sa

Details Method for forming a plug and semiconductor device having the sa Method for forming a plug and semiconductor device having the sa

1995-02-24

1996-07-09

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437192, 437194, 437195, 437203, H01L 2144

Patent

active

055344623

ABSTRACT:
A conductive plug (46) is formed in a semiconductor device (30) by using an aluminum nitride glue layer (42). The glue layer is deposited on an interlayer dielectric (40) prior to forming a contact opening (44), such that the glue layer does not line the opening sidewalls or bottom. Tungsten or other plug material is then deposited in the opening and on the glue layer and subsequently polished or etched back to form the plug. The remaining portions of the glue layer may be left within the device or removed as deemed appropriate.

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