Method for forming a plane structure

Semiconductor device manufacturing: process – Chemical etching

Reexamination Certificate

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C438S745000, C438S725000

Reexamination Certificate

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07101796

ABSTRACT:
A method for forming a plane structure. It comprises the following steps: forms a liquid material with a thicker thickness on a substrate, rotating both the liquid material and the substrate around the axis of the substrate, applying a solvent on the rotating liquid material to remove partial liquid material. It also comprises the following steps: form a thicker removable material on a substrate, and partially remove the surface part of the removable material.

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patent: 6406994 (2002-06-01), Ang et al.
patent: 2001/0054735 (2001-12-01), Nagai
patent: 2002/0132393 (2002-09-01), Kraxenberger et al.
patent: 2005/0178401 (2005-08-01), Boyers

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