Semiconductor device manufacturing: process – Chemical etching
Reexamination Certificate
2006-09-05
2006-09-05
Nguyen, Thanh (Department: 2813)
Semiconductor device manufacturing: process
Chemical etching
C438S745000, C438S725000
Reexamination Certificate
active
07101796
ABSTRACT:
A method for forming a plane structure. It comprises the following steps: forms a liquid material with a thicker thickness on a substrate, rotating both the liquid material and the substrate around the axis of the substrate, applying a solvent on the rotating liquid material to remove partial liquid material. It also comprises the following steps: form a thicker removable material on a substrate, and partially remove the surface part of the removable material.
REFERENCES:
patent: 5244839 (1993-09-01), Baker et al.
patent: 5473187 (1995-12-01), Baker et al.
patent: 5569614 (1996-10-01), Kataoka et al.
patent: 5753940 (1998-05-01), Komoto
patent: 6020639 (2000-02-01), Ulrich et al.
patent: 6245640 (2001-06-01), Claussen et al.
patent: 6406994 (2002-06-01), Ang et al.
patent: 2001/0054735 (2001-12-01), Nagai
patent: 2002/0132393 (2002-09-01), Kraxenberger et al.
patent: 2005/0178401 (2005-08-01), Boyers
Huang Jui-Tsen
Hung Kuei-Chun
Nguyen Thanh
United Microelectronics Corp.
LandOfFree
Method for forming a plane structure does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for forming a plane structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a plane structure will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3553642