Method for forming a planarized thin film

Chemistry: electrical and wave energy – Processes and products – Vacuum arc discharge coating

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20419215, 20419235, C23C 1434

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active

048161268

ABSTRACT:
Charged particles are irradiated over a thin film formed on a convex and concave surface of a substrate or over a thin film being formed on a convex and concave surface of a substrate. During the irradiation, raise in temperature of the thin film and impingement of charged particles cause the fluidization of the thin film, so that a planarized thin film is formed within a short period of time.

REFERENCES:
patent: 3451912 (1969-06-01), D'heurle et al.
patent: 3661761 (1972-05-01), Koenig
patent: 3868723 (1975-02-01), Lechaton et al.
patent: 3983022 (1976-09-01), Auyang et al.
patent: 4007103 (1977-02-01), Baker et al.
patent: 4035276 (1977-07-01), Havas et al.
patent: 4336118 (1982-06-01), Patten et al.
H. P. Bader et al., "Planarization . . . Simulation", J. Vac. Sci. Technol., Nov./Dec. 1987, pp. 2167-2171.
Ting et al., "Study . . . SiO.sub.2 ", J. Vac. Sci. Technol. vol. 15, No. 3, May/Jun. 1978, pp. 1105-1112.
"Y. H. Park et al., Influence of D.C. Bias on Aluminum Films Prepared with a High Rate Magnetron Sputtering Cathode Thin Solid Films 129" (1985), 309-314.
J. Electrochem. Soc. Solid-State Science and Technology, Jun. 1985,--pp. 1466-1472.

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