Method for forming a planarization etch stop

Electrolysis: processes – compositions used therein – and methods – Electrolytic coating – Coating contains embedded solid material

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205123, 437228, 437230, 437245, 437246, C25D 1500, H01L 21463, H01L 21465

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055121632

ABSTRACT:
A method for stopping a polish planarization wherein an etch-stop layer (13, 21, 31) is formed. The etch-stop layer (13, 21, 31) may be formed on a substrate (11) or on a conductive layer (12). The etch-stop layer (13, 21, 31) includes a metal and a grit material (17, 25, 35) such as a diamond powder. The etch-stop layer (13, 21, 31) serves as a stop to a mechanical polishing apparatus. The mechanical polishing apparatus removes a planarization layer (14, 22, 33) by polishing, but is unable to remove the etch-stop layer (13, 21, 31) because the etch-stop layer is able to withstand a polishing action of the mechanical polishing apparatus. The etch-stop layer (13, 21, 31) provides protection for the metal from mechanical damage during polish planarization and allows formation of a planar surface.

REFERENCES:
patent: 3666636 (1972-05-01), Tomaszewski et al.
patent: 3691707 (1972-09-01), Von Arx et al.
patent: 3762882 (1973-10-01), Grutza
patent: 4155721 (1979-05-01), Fletcher
patent: 4789648 (1988-12-01), Chow et al.
patent: 4879258 (1989-11-01), Fisher
patent: 5246884 (1993-09-01), Jaso et al.
patent: 5272117 (1993-12-01), Roth
J. P. Celis et al, Kinetics of the Deposition of Alumina Particles from Copper Sulfate Plating Baths, J. Electrochem Soc., l vol. 124, No. 10, Oct. 1977, pp. 1508-1511.
F. A. Lowenheim, Electroplating, McGraw-Hill Book Co., New York, 1978, pp. 194-205.
V. Comello (ed.), Planarizing Leading Edge Devices, Semiconductor International, Nov. 1990, pp. 60-66.
P. Sinter (ed.), Searching for Perfect Planarity, Semiconductor International, Mar. 1992, pp. 44-48.

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