Fishing – trapping – and vermin destroying
Patent
1994-09-30
1996-09-10
Dang, Trung
Fishing, trapping, and vermin destroying
437 70, 437 72, 437 73, H01L 2176
Patent
active
055545602
ABSTRACT:
An improved process for fabricating a planar field oxide structure on a silicon substrate was achieved. The process involves forming the field oxide by using the LOCal Oxidation of Silicon (LOCOS) process in which the device area is protected from oxidation by a silicon nitride layer. A sacrificial leveling layer, such as spin-on-glass (SOG) or a anti-reflective coating (ARC) layer is used to fill in the gap between the silicon nitride and the field oxide structure and make more planar the substrate surface. The leveling layer is then etched back non-selectively by plasma etching to planarize the portion of the field oxide extending above the substrate surface. The method does not require a recess to be etched in the silicon substrate and therefore, has certain reliability and cost advantages.
REFERENCES:
patent: 4398992 (1983-08-01), Fang et al.
patent: 4539744 (1985-09-01), Burton
patent: 5169801 (1992-12-01), Sato
patent: 5236861 (1993-08-01), Otsu
patent: 5246537 (1993-09-01), Cooper et al.
patent: 5324689 (1994-06-01), Yoo
patent: 5374585 (1994-12-01), Smith et al.
patent: 5413953 (1995-05-01), Ghien et al.
Chien Sun-Chieh
Hsue Chen-Chiu
Liu Ming-Hua
Dang Trung
United Microelectronics Corporation
Wright William H.
LandOfFree
Method for forming a planar field oxide (fox) on substrates for does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for forming a planar field oxide (fox) on substrates for , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a planar field oxide (fox) on substrates for will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1320176