Method for forming a photodiode with improved photoresponse beha

Details Method for forming a photodiode with improved photoresponse beha Method for forming a photodiode with improved photoresponse beha

1998-05-05

2000-05-23

Wilczewski, Mary

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

438237, 438 91, H01L 2100, H01L 3100

Patent

active

060665106

ABSTRACT:
The quantum efficiency of a photodiode is substantially increased by forming the photodiode on a heavily-doped layer of semiconductor material which, in turn, is formed on a semiconductor substrate. The heavily-doped layer of semiconductor material tends to repel information carriers in the photodiode from being lost to the substrate, and prevents noise carriers from the substrate from diffusing up into the photodiode. In addition, the red and blue photoresponses are balanced by adjusting the depth of the photodiode.

REFERENCES:
patent: 5614744 (1997-03-01), Merrill
Aw, C. H. et al., "FA 11.2: A 128x128-Pixel Standard-CMOS Image Sensor with Electronic Shutter," 1996 IEEE International Solid-State Circuits Conference, pp. 180-181; pp. 140-141 & p. 397.
Ando, F. et al., "A 250,000-Pixel Image Sensor with FET Amplification at Each Pixel for High-Speed Television Cameras," IEEE International Solid-State Circuits Conference, Feb. 16, 1990, pp. 212-213.

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