Method for forming a patterned thick metallization atop a...

Details Method for forming a patterned thick metallization atop a... Method for forming a patterned thick metallization atop a...

2009-01-20

2011-11-29

Richards, N. Drew (Department: 2895)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

C438S654000, C438S655000, C438S656000, C438S688000, C257S330000, C257S331000, C257SE21584

Reexamination Certificate

active

08067304

ABSTRACT:
A method is disclosed for forming a patterned thick metallization atop a semiconductor chip wafer. The method includes fabricating a nearly complete semiconductor chip wafer ready for metallization; depositing a bottom metal layer of sub-thickness TK1together with its built-in alignment mark using a hot metal process; depositing a top metal layer of sub-thickness TK2using a cold metal process thus forming a stacked thick metallization of total thickness TK=TK1+TK2; then, use the built-in alignment mark as reference, patterning the stacked thick metallization. A patterned thick metallization is thus formed with the advantages of better metal step coverage owing to the superior step coverage nature of the hot metal process as compared to the cold metal process; and lower alignment error rate owing to the lower alignment signal noise nature of the cold metal process as compared to the hot metal process.

REFERENCES:
patent: 5532179 (1996-07-01), Chang et al.
patent: 5763915 (1998-06-01), Hshieh et al.
patent: 5851920 (1998-12-01), Taylor et al.

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