Superconductor technology: apparatus – material – process – Processes of producing or treating high temperature... – Producing josephson junction – per se
Patent
1994-02-15
1995-08-29
King, Roy V.
Superconductor technology: apparatus, material, process
Processes of producing or treating high temperature...
Producing josephson junction, per se
505410, 505413, 505473, 505192, 505728, 505702, 427 62, 427 63, 257 33, 216 3, H01L 3924
Patent
active
054460166
ABSTRACT:
A method for forming a patterned oxide superconductor thin film on a substrate comprises steps of forming a metal or semi-metal layer on a portion of the substrate, on which the oxide superconductor thin film will be formed, forming a layer of a material including silicon on a portion of the substrate, on which an insulating layer will be formed, removing the metal or semi-metal layer and depositing an oxide superconductor thin film over the substrate.
REFERENCES:
patent: 5196395 (1993-03-01), James et al.
patent: 5198413 (1993-03-01), Tarutani et al.
Ma et al, "Novel method of patterning YBaCuO Superconducting thin films", Appl. Phys. lett. 55(9) Aug. 1989, pp. 896-898.
Copetti et al, "Improved inhibit patterning of Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7 thin films", Appl. Phys. lett 61(25) Dec. 1992, pp. 3041-3043.
Yamada et al, "Ultrathin metal films on silicon substrates for the growth of oxide superconductor overlayers", Proc. Int. Conf. Electron. Mater. 2nd, Edited by Chang et al. (1990), pp. 387-392.
Iiyama Michitomo
Nakamura Takao
Tanaka So
King Roy V.
Sumitomo Electric Industries Ltd.
LandOfFree
Method for forming a patterned oxide superconductor thin film does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for forming a patterned oxide superconductor thin film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a patterned oxide superconductor thin film will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1819484