Method for forming a p-n junction in silicon carbide

Details Method for forming a p-n junction in silicon carbide Method for forming a p-n junction in silicon carbide

1993-01-25

1994-06-07

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437 31, 437100, 437151, 437174, H01L 2120

Patent

active

053189159

ABSTRACT:
A method for forming a p-n junction in silicon carbide includes the steps of amorphizing a portion of a monocrystalline silicon carbide substrate, implanting dopant ions into the amorphous portion of the substrate and then recrystallizing the amorphous portion to thereby form a substantially monocrystalline region including the dopant ions. In particular, the amorphizing step includes the steps of masking an area on the face of the monocrystalline silicon carbide substrate and then directing electrically inactive ions to the masked area so that an amorphous region in the substrate is formed. Accordingly, the amorphous region has sidewalls extending to the face that are substantially orthogonal to the bottom edge of the amorphous region. Once the amorphized region is defined, electrically active dopant ions are implanted into the amorphous region. The dopant ions are then diffused into the amorphous region and become uniformly distributed. Next, the doped amorphized region is recrystallized to obtain a substantially monocrystalline doped region. If the region surrounding the recrystallized region are of opposite conductivity type, a vertically walled p-n junction is formed.

REFERENCES:
patent: 4567502 (1986-01-01), Nakagawa et al.
patent: 4916507 (1990-04-01), Boudou et al.
patent: 4945394 (1990-07-01), Palmour et al.
patent: 5030580 (1991-07-01), Furukawa et al.
patent: 5087576 (1992-02-01), Edmond et al.
patent: 5248385 (1993-09-01), Powell
patent: 5254484 (1993-10-01), Hefner et al.
patent: 5270244 (1993-12-01), Baliga
Ghandhi "VLSI Fabrication principles" silicon and gallium arsenide pp. 324, 325, 1983.
Trew, Yan and Mock, "The Potential of Diamond and SiC Electronic Devices for Microwave and Millimeter-Wave Power Applications," Proceedings of the IEEE, vol. 79, No. 5, pp. 598-620, May, 1991.
Bhatnagar and Baliga, "Analysis of Silicon Carbide Power Device Performance", IEEE, pp. 176-180, 1991.
Pan and Steckl, "Reactive Ion Etching of SiC Thin Films by Mixtures of Fluorinated Gases and Oxygen", J. Electrochem. Soc., vol. 137, No. 1, pp. 212-220, Jan., 1990.
Davis, "Epitaxial Growth and Doping of and Device Development in Mono-crystalline .beta.-SiC Semiconductor Thin Films," Thin Solid Films, vol. 181, pp. 1-15, Dec., 1989.
Shenai, Scott and Baliga, "Optimum Semiconductors for High-Power Electronics", IEEE Transactions on Electron Devices, vol. 36, No. 9, pp. 1811-1823, Sep., 1989.
Bumgarner, Kong, and Kim, et al., "Monocrystalline .beta.-SiC Semiconductor Thin Films: Epitaxial Growth, Doping, and FET Device Development," 1988 Proceedings of the 38th Electronics Components Conf., pp. 342-349, 1988.
Daimon, Yamanaka, Shinohara, Sakuma, Misawa, Endo and Yoshida, "Operation of Schottky-Barrier Field Effect Transistors of 3C-SiC up to 400.degree. C.", Appl. Phys. Lett., vol. 51, pp. 2106-2108, Dec., 1987.
Kelner, Binari, Sleger and Kong, ".beta.-SiC MESFET's and Buried Gate JFET's", IEEE Electron Device Letters, vol. EDL-8, No. 9, pp. 428-430, Sep. 1987.
Kong, Palmour, Glass and Davis, "Temperature Dependence of the Current-Voltage Characteristics of Metal-Semiconductor . . . Via Chemical Vapor Deposition", Appl. Phys. Lett., vol. 51, pp. 442-444, Aug., 1987.
Kelner, Binari, Sleger and Kong, ".beta.-SiC MESFETs", Mater. Res. Soc. Symp. Proc., vol. 97, pp. 227-232, Sep., 1987.
Edmond, Palmour, and Davis, "Chemical Etching of Ion Implanted Amorphous Silicon Carbide," J. Electrochem. Soc.: Solid-State Science and Technology, pp. 650-652, Mar., 1986.
Sugiura, Lu, Cadien and Steckl, "Reactive Etching of SiC Thin Films Using Fluorinated Gases", J. Vac. Sci. Technology.B 4 (1), pp. 349-355, Jan.-Feb., 1986.
Chang, Fang, Huong, and Wu, "Noval Passivation Dielectrics--The Boron- or Phosphorus-Doped Hydrogenated Amorphous Silicon Carbide Films", J. Electrochem. Soc.: Solid State Science and Technology, pp. 418-422, Feb., 1985.
McHargue, Lewis, Williams and Appleton, "The Reactivity of Ion-Implanted SiC", Materials Science and Engineering, vol. 69, pp. 391-395, 1985.
Palmour, Davis, Astell-Burt and Blackborow, "Effects of Cathode Materials and Gas Species on the Surface Characteristics of Dry Etched Monocrystalline Beta-SiC Thin Films", Silicon Carbide, pp. 491-550.

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