Method for forming a nonvolatile memory device

Details Method for forming a nonvolatile memory device Method for forming a nonvolatile memory device

1995-01-30

1996-03-05

Thomas, Tom

Fishing, trapping, and vermin destroying

437 43, H01L 218247

Patent

active

054967562

ABSTRACT:
A nonvolatile SRAM cell (20) includes a six-transistor SRAM cell portion (22) and a three-transistor nonvolatile memory portion (30). The nonvolatile memory portion (30) is connected to one storage node (101) of the SRAM cell portion (22). The nonvolatile SRAM cell (20) is three-dimensionally integrated in four layers of polysilicon. The nonvolatile memory portion (30) includes a thin film memory cell (32) having an oxide-nitride-oxide structure (41), and is programmable with a relatively low programming voltage. The three-dimensional integration of the nonvolatile SRAM cell (20) and relatively low programming voltage results in lower power consumption and smaller cell size.

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