Metal treatment – Compositions – Heat treating
Patent
1977-03-31
1978-09-05
Dean, R.
Metal treatment
Compositions
Heat treating
357 50, 357 91, H01L 21265, H01L 2126
Patent
active
041117204
ABSTRACT:
A method for forming a non-epitaxial bipolar integrated circuit comprising first forming in a silicon substrate of one-type of conductivity, recessed silicon dioxide regions extending into the substrate and laterally enclosing at least one silicon substrate region of said one-type conductivity. Then, forming by ion implantation the first region of opposite-type conductivity which is fully enclosed laterally by said recessed silicon dioxide. This region is formed by directing a beam of ions of opposite-type conductivity impurity at said enclosed silicon region at such energy and dosage levels that the opposite conductivity-type impurity introduced into the substrate in said region will have a concentration peak at a point below the surface of this first region. Then, a region of said one-type conductivity is formed which extends from the surface into said first opposite-type conductivity region to a point between said concentration peak and said surface. Next, a second region of said opposite-type conductivity is formed which extends from the surface part way into said region of one-type conductivity.
Preferably, the ion beam energy level is at least one MeV, and said concentration peak is at least one micron below the surface. It is further preferable that the energy and dosage levels of the beam of ions are selected so that the opposite-type conductivity impurity has a more gradual distribution gradient between the peak and the surface than between the peak and the junction of the first region with the substrate.
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Michel Alwin E.
Schwenker Robert O.
Ziegler James F.
Dean R.
International Business Machines - Corporation
Kraft J. B.
Roy Upendra
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