Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Heterojunction formed between semiconductor materials which...
Reexamination Certificate
2008-03-07
2011-10-11
Nhu, David (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Heterojunction formed between semiconductor materials which...
C257S201000, C257S615000, C257S656000, C257SE21051, C257SE21085, C257SE21217, C257SE21227, C257SE21311, C257SE21319, C257SE21539
Reexamination Certificate
active
08035131
ABSTRACT:
A method for forming a nitride semiconductor laminated structure includes forming a first layer that is an n-type or i-type first layer composed of a group III nitride semiconductor using an H2carrier gas; forming a second layer by laminating a p-type second layer composed of a group III nitride semiconductor and containing Mg on the first layer using an H2carrier gas; and forming a third layer that is an n-type or i-type third layer composed of a group III nitride semiconductor on the second layer using an H2carrier gas after forming the second layer. A method for manufacturing a nitride semiconductor device includes the method steps for forming the nitride semiconductor laminated structure.
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Satoshi Okubo, “Not Only Shining Any Longer GaN Behind Evolution of Devices”, Jun. 5, 2006, Nikkei Electronics, p. 51-60 with its partial English translation (3 pages).
Egami Shin
Ohta Hiroaki
Otake Hirotaka
Nhu David
Rabin & Berdo P.C.
Rohm & Co., Ltd.
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