Method for forming a nitride semiconductor laminated...

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Heterojunction formed between semiconductor materials which...

Reexamination Certificate

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C257S201000, C257S615000, C257S656000, C257SE21051, C257SE21085, C257SE21217, C257SE21227, C257SE21311, C257SE21319, C257SE21539

Reexamination Certificate

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08035131

ABSTRACT:
A method for forming a nitride semiconductor laminated structure includes forming a first layer that is an n-type or i-type first layer composed of a group III nitride semiconductor using an H2carrier gas; forming a second layer by laminating a p-type second layer composed of a group III nitride semiconductor and containing Mg on the first layer using an H2carrier gas; and forming a third layer that is an n-type or i-type third layer composed of a group III nitride semiconductor on the second layer using an H2carrier gas after forming the second layer. A method for manufacturing a nitride semiconductor device includes the method steps for forming the nitride semiconductor laminated structure.

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Satoshi Okubo, “Not Only Shining Any Longer GaN Behind Evolution of Devices”, Jun. 5, 2006, Nikkei Electronics, p. 51-60 with its partial English translation (3 pages).

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