Method for forming a nitride layer using preheated ammonia

Details Method for forming a nitride layer using preheated ammonia Method for forming a nitride layer using preheated ammonia

1991-08-26

1993-02-23

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437225, 437190, 437245, H01L 2144

Patent

active

051889790

ABSTRACT:
A process for forming a titanium nitride barrier layer in semiconductor devices using preheated ammonia reduces susceptibility to junction spiking. In one form of the invention, a substrate having an overlying layer of titanium is heated to a predetermined temperature in a reaction chamber. An ammonia gas is preheated to temperature not less than 600.degree. C. and is introduced into the reaction chamber. The preheated ammonia gas and the titanium layer react to form a quality titanium nitride (TiN) layer which is highly resistant to the junction spiking phenomenon. Nitride layers of other Group IVB or Group VB elements of the periodic table may also be formed using the present invention.

REFERENCES:
patent: 4535000 (1985-08-01), Gordon
patent: 4784973 (1988-11-01), Stevens et al.
patent: 4920071 (1990-04-01), Thomas
patent: 5002646 (1991-03-01), Egerton et al.
patent: 5021134 (1991-06-01), Blackburn et al.
patent: 5043300 (1991-08-01), Nulman

Affiliated with

Also associated with

Rating

Method for forming a nitride layer using preheated ammonia does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming a nitride layer using preheated ammonia, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a nitride layer using preheated ammonia will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2204455