Method for forming a nitride insulating film on a silicon semico

Details Method for forming a nitride insulating film on a silicon semico Method for forming a nitride insulating film on a silicon semico

1980-03-07

1981-11-03

Newsome, John H.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

204177, 427 451, 427 46, 427 531, 427 94, C23C 1100

Patent

active

042986290

ABSTRACT:
In a method for forming an insulating film on a semiconductor substrate surface, the silicon nitride of the insulating film has been formed by a plasma CVD or a direct nitridation. In the present invention, a gas plasma of a nitrogen-containing gas is generated in a direct nitridation reaction chamber, and the semiconductor silicon body is heated to a temperature of from approximately 800 to approximately 1300.degree. C. within the gas plasma atmosphere, thereby forming the silicon nitride film. The resulting silicon nitride film has a dense structure and a low oxygen concentration and a thick silicon nitride film is formed in a short period by direct nitridation of silicon.

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patent: 4181541 (1980-01-01), LeFrancois
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patent: 4212687 (1980-07-01), Tanaka et al.

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