Method for forming a narrow thin film line

Details Method for forming a narrow thin film line Method for forming a narrow thin film line

1981-03-19

1982-04-13

Kendall, Ralph S.

Coating processes

Electrical product produced

Condenser or capacitor

427 87, 427 88, 156612, 156656, 430318, H01L 2188

Patent

active

043248144

ABSTRACT:
A monocrystalline semiconductor substrate is provided, and a thin film pattern is defined on a surface thereof. An epitaxial layer is then grown on the substrate surface such that it overgrows the thin film pattern a predetermined distance. That portion of the thin film not covered by the epitaxial layer is then removed.

REFERENCES:
patent: 4119992 (1978-10-01), Ipri et al.
C. O. Bozler et al., Fabrication and Numerical Simulation of the Permeable Base Transistor, IEEE Trans. Electron Devices, vol. ED-27, No. 6, Jun. 1980, pp. 1128-1141.

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