Method for forming a narrow dimensioned region on a body

Details Method for forming a narrow dimensioned region on a body Method for forming a narrow dimensioned region on a body

1978-11-03

1981-03-17

Massie, Jerome W.

Metal treatment

Compositions

Heat treating

29576B, 29578, 29580, 148187, 156643, 156657, 156662, 428 88, 428 95, H01L 2122, H01L 2126, H01L 21285, H01L 21308

Patent

active

042565146

ABSTRACT:
A method for forming a narrow dimensioned, for example, submicron, region on a silicon body that involves forming on the silicon body regions having substantially horizontal surfaces and substantially vertical surfaces. A layer of a very narrow dimension is formed both on the substantially horizontal and substantially vertical surfaces. Reactive ion etching is applied to the layer to substantially remove the horizontal layer while leaving the vertical layer substantially intact. The vertical layer dimension is adjusted depending upon the original thickness of the layer applied.

REFERENCES:
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patent: 3966577 (1976-06-01), Hochberg
patent: 3971684 (1976-07-01), Muto
patent: 4042726 (1977-08-01), Kaji et al.
patent: 4093503 (1978-06-01), Harris
patent: 4104086 (1978-08-01), Bondur
patent: 4104090 (1978-08-01), Pogge
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Deines et al., "Process . . . Geometries", IBM Technical Disclosure Bulletin, vol. 21, No. 9 (2/79), pp. 3628-3629.

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