Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1978-11-03
1980-06-24
Rutledge, L. Dewayne
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
29578, 148 15, 148174, 148175, 156643, 156653, 156657, 156662, 204192E, 357 20, 357 49, 357 50, 357 54, 357 56, H01L 21302, H01L 2176
Patent
active
042093490
ABSTRACT:
A method for forming a narrow, such as a submicrometer, dimensioned mask opening on a silicon body involving forming a first insulator region having substantially a horizontal surface and a substantially vertical surface. A second insulator is applied on both the horizontal surface and substantially vertical surfaces. The second insulator is composed of a material different from that of the first insulator layer. Reactive ion etching of the second layer removes the horizontal layer and provides a narrow dimensioned second insulator region on the silicon body. The surface of the silicon body is then thermally oxidized. The narrow dimensioned second insulator region is removed to form a narrow dimensioned mask opening.
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Ho Irving T.
Riseman Jacob
International Business Machines - Corporation
Rutledge L. Dewayne
Saba W. G.
Saile George O.
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