Method for forming a MOSFET with substrate source contact

Fishing – trapping – and vermin destroying

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437203, 437913, 148DIG168, H01L 2144

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active

050231960

ABSTRACT:
A MOSFET having a back-side source contact and top-side gate and drain contacts is provided by a structure comprising superposed N.sup.+, N-,P-, N.sup.+ regions arranged between top and bottom surfaces of the semiconductor die. In a preferred implementation, two trenches are etched from the top surface to the P-, N.sup.+ interface. A buried P-, N.sup.+ short is provided in one trench and a gate dielectric and gate electrode are provided over the sidewall P- region exposed in the other trench. This creates a vertical MOSFET in which the N.sup.+ substrate forms the source region shorted to the P- body region in which the channel is created by the gate. Superior performance is obtained in RF grounded-source circuit applications.

REFERENCES:
patent: 4374455 (1983-02-01), Goodman
patent: 4398339 (1983-08-01), Blanchard et al.
patent: 4683643 (1987-08-01), Nakajima et al.
patent: 4694561 (1987-09-01), Lebowitz
patent: 4713678 (1987-12-01), Womack et al.
patent: 4738936 (1988-04-01), Rice
patent: 4767722 (1988-08-01), Blanchard
patent: 4797373 (1989-01-01), Malhi et al.
patent: 4824793 (1989-04-01), Richardson et al.
patent: 4859621 (1989-08-01), Einthoven

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