Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Making emissive array
Reexamination Certificate
2007-05-29
2007-05-29
Baumeister, B. William (Department: 2891)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Making emissive array
C372S050121
Reexamination Certificate
active
10510357
ABSTRACT:
A method for forming a modified semiconductor having a number of band gaps involves providing a semiconductor having a surface and a quantum region which emits photons in response to electrical or optical stimulation, the quantum region having an original band gap and being disposed under the surface and applying a number of layers of a number of materials to a number of selected regions of the surface, the materials being adapted to cause, upon thermal annealing, a number of different degrees of intermixing in a number of portions of the quantum region disposed immediately below each of the selected regions of the surface. The layers of materials can be applied in a dot or line pattern, or both, to increase the plurality of band gap tuning. The method includes thermally annealing the layers to the surface. The methods result in a modified semiconductor which exhibits a number of different band gaps in a number of portions of the quantum region depending upon the positioning of the layers of materials on the surface immediately above the respective portions of the quantum region.
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Chua Soo Jin
Dong Jian Rong
Teng Jing Hua
Agency for Science Technology and Research
Baumeister B. William
Morriss O'Bryant Compagni
National University of Singapore
Reames Matthew L.
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