Method for forming a metallic reflecting layer in a semiconducto

Details Method for forming a metallic reflecting layer in a semiconducto Method for forming a metallic reflecting layer in a semiconducto

1998-11-13

2000-11-28

Bowers, Charles

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

257436, H01L 2100

Patent

active

061534463

ABSTRACT:
A method for forming a metallic reflecting layer in a semiconductor photodiode including a CMOS photodiode to enhance the sensitivity by filling a trench formed in the isolation next to the depletion region of the semiconductor photodiode with high reflectivity metal. The metal filled in the trench is used as a metallic reflecting layer to increase the number of photons reaching the depletion region by reflecting part of the aslope incident photons. An insulator is formed on the top of the metallic reflecting layer to electrically insulate the metallic reflecting layer from other conducting device formed by the follow-up process.

REFERENCES:
patent: 5721429 (1998-02-01), Radford et al.

Affiliated with

Also associated with

Rating

Method for forming a metallic reflecting layer in a semiconducto does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming a metallic reflecting layer in a semiconducto, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a metallic reflecting layer in a semiconducto will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1724354