Method for forming a metallic reflecting layer in a semiconducto

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

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257436, H01L 2100

Patent

active

061534463

ABSTRACT:
A method for forming a metallic reflecting layer in a semiconductor photodiode including a CMOS photodiode to enhance the sensitivity by filling a trench formed in the isolation next to the depletion region of the semiconductor photodiode with high reflectivity metal. The metal filled in the trench is used as a metallic reflecting layer to increase the number of photons reaching the depletion region by reflecting part of the aslope incident photons. An insulator is formed on the top of the metallic reflecting layer to electrically insulate the metallic reflecting layer from other conducting device formed by the follow-up process.

REFERENCES:
patent: 5721429 (1998-02-01), Radford et al.

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