Method for forming a metal wire of a semiconductor device

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

437245, 148DIG102, 148DIG106, H01L 213205

Patent

active

054666406

ABSTRACT:
The object of the present invention is to prevent the electrical short between the adjacent metal wires by forming metal wires alternately between insulation films and to improve the process margin in the lithography process and the etching process.
The present invention alternately forms a plurality of metal wires between the insulation films by manufacturing the photomask for metal wires in two separate pieces to correspond to the photomask for general metal wires for forming a plurality of metal wires which are densely constituted, and by utilizing the two photomasks.

REFERENCES:
patent: 4484978 (1984-11-01), Keyser
patent: 4996133 (1991-02-01), Brighton et al.
patent: 5420078 (1995-05-01), Sikora

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for forming a metal wire of a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming a metal wire of a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a metal wire of a semiconductor device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1220803

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.