Method for forming a metal silicide having a lower potential...

Details Method for forming a metal silicide having a lower potential... Method for forming a metal silicide having a lower potential...

2011-07-26

2011-07-26

Stark, Jarrett J (Department: 2823)

Semiconductor device manufacturing: process

Forming schottky junction

Using refractory group metal

C438S649000, C438S655000, C438S682000, C257S768000

Reexamination Certificate

active

07985668

ABSTRACT:
Generally, the present disclosure is directed to a method of removing “weakened” areas of a metal silicide layer during silicide layer formation, thereby reducing the likelihood that material defects might occur during subsequent device manufacturing. One illustrative embodiment includes depositing a first layer of a refractory metal on a surface of a silicon-containing material, and performing first and second heating processes. The method further comprises performing a cleaning process, depositing a second layer of the refractory metal above the silicon-containing material, and performing a third heating process.

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Saraswat, “Polycides, Salicides and Metals Gates” Presentation, Apr. 28, 2005.

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