Method for forming a metal pattern on a substrate

Details Method for forming a metal pattern on a substrate Method for forming a metal pattern on a substrate

1996-06-24

1998-11-03

Niebling, John

Fishing, trapping, and vermin destroying

437184, 437195, 437238, 437241, 437978, 437981, 1566531, H01L 2144, H01L 21441

Patent

active

058307745

ABSTRACT:
A method for forming a metal pattern on a substrate (11) includes forming a dielectric stack (14) on a major surface (12) of the substrate (11) and forming a mask (22) on the dielectric stack (14). The dielectric stack (14) includes an aluminum nitride layer (16) serving as an etch stop layer between two dielectric layers (15, 17). An opening is formed in the dielectric stack (14) via successive etching. The etching of the dielectric layer (15) between the aluminum nitride layer (16) and the substrate (11) undercuts the aluminum nitride layer (16). A metal layer (30) is deposited on the major surface through the opening via sputtering. The metal layer (30) on the major surface is distinctively separated from a metal layer (34) on the edge of the opening. The mask (22) is dissolved in a solvent, thereby lifting-off a metal layer (34) deposited on the mask (22).

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Dalal et al., "Methods of opening contact holes in oxide-nitride structure", IBM Tech. Disc. bull., vol.24, No.9, pp. 4728-4729, Feb. 1, 1982.
Wolf & Tauber, Silicon Processing for the VLSI Era: vol. 1--Process Technolgoy, pp. 335 & 532-534, 1986.

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