Method for forming a metal contact of a semiconductor device

Fishing – trapping – and vermin destroying

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437190, 437192, 437200, H01L 21283

Patent

active

053806808

ABSTRACT:
The present invention provides a method for forming a metal contact in a semiconductor device which improves the reliability of electric wiring by forming a double thin metal layer on the contact plug metal. This method comprises the steps of: forming a first contact hole up to the upper surface of a semiconductor substrate 1; filling a tungsten 5 in the first contact hole; depositing a first thin metal film 6 and a second thin metal film 7 on the entire structure sequentially; applying a photoresist 8 on the second thin metal film 7; forming a pattern for a second contact hole; forming the second contact hole by etching the second thin metal film 7, the first thin metal film 6 and the insulation layer 4 sequentially by using a photoresist 8 as an etch barrier; stripping the photoresist 8 and etching the second thin metal film 7; and depositing an aluminum alloy 9 on the entire structure.

REFERENCES:
patent: 4866009 (1989-09-01), Matsuda
patent: 4987099 (1991-01-01), Flanner
patent: 5026666 (1991-06-01), Hills et al.
patent: 5204286 (1993-04-01), Doan
patent: 5210053 (1993-05-01), Yamagata
patent: 5219793 (1993-06-01), Cooper et al.
patent: 5223084 (1993-06-01), Uesato et al.

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