Method for forming a memory cell comprising a semiconductor...

Details Method for forming a memory cell comprising a semiconductor... Method for forming a memory cell comprising a semiconductor...

2006-12-19

2010-11-16

Huynh, Andy (Department: 2818)

Semiconductor device manufacturing: process

Making device array and selectively interconnecting

Using structure alterable to conductive state

C438S237000, C438S467000, C438S600000, C257S530000, C257SE23147, C257SE27073

Reexamination Certificate

active

07833843

ABSTRACT:
A method of forming a memory cell involves forming a semiconductor junction diode in series with an antifuse. The cell is programmed by rupture of the antifuse. The semiconductor junction diode comprises silicon, the silicon crystallized in contact with a silicide. The silicide apparently provides a template for crystallization, improving crystallinity and conductivity of the diode, and reducing the programming voltage required to program the cell. It is advantageous to reduce a dielectric layer (such as an oxide, nitride, or oxynitride) intervening between the silicon and the silicon-forming metal during the step of forming the silicide.

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