Method for forming a mask pattern for contact hole

Details Method for forming a mask pattern for contact hole Method for forming a mask pattern for contact hole

1990-11-28

1992-10-20

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437924, 148DIG102, 156644, H01L 21465

Patent

active

051570025

ABSTRACT:
A method for forming a mask pattern for contact hole in a highly integrated semiconductor device is disclosed. The method according to the invention utilizes a SOG film in order to form an accurate and compact mask pattern for the formation of a contact hole within the highly limited area at a predetermined semiconductor layer where a sizable step difference exists. The method according to the invention is also applicable for manufacturing a multi-layered highly integrated semiconductor device.

REFERENCES:
patent: 4619037 (1986-10-01), Taguchi et al.
patent: 4764484 (1988-08-01), Mo
patent: 4966867 (1990-10-01), Crotti et al.

Affiliated with

Also associated with

Rating

Method for forming a mask pattern for contact hole does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming a mask pattern for contact hole, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a mask pattern for contact hole will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-191961