Method for forming a low temperature binary glass

Glass manufacturing – Processes – With coating

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65 312, 65 182, 65 6051, 65102, 427 93, 427 99, 501 55, 65 64, 65106, C03B 2900, C03B 3200

Patent

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044179146

ABSTRACT:
The method of the invention provides a thin film deposit of a binary glass for use in integrated circuits which binary glass has a softening or flow point far below temperatures at which glasses normally used in connection with integrated circuits flow. After the binary glass has been deposited (on a semiconductor substrate), it is heated and reflowed. Preferably the glass comprises a mixture of germanium dioxide and silicon dioxide wherein the germanium dioxide is no greater than approximately 50 mole percent of the mixture. Phosphorus is added to the glass film for passivation of the underlying devices.

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Kern, Chemical Vapor Deposition Systems for Glass Passivation of Integrated Circuits; Solid State Technology vol. 18, No. 12; 12-1975, pp. 25-33.
Raymond; Conference: Proceedings of the 20th Electronic Components Conference, Cherry Hill, N.J.; May 14-16, 1979; Fabrication of Passive Components for High Temperature Instrumentation.

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