Method for forming a lithographic mask used for patterning semic

Details Method for forming a lithographic mask used for patterning semic Method for forming a lithographic mask used for patterning semic

1998-06-16

1999-12-14

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430296, 430394, G03F 900

Patent

active

060015136

ABSTRACT:
A method of forming a lithographic mask, including exposing an energy beam on a first selected spot (118) on the patterning layer of a mask substrate, within a selected portion (117) on the patterning layer, and exposing an energy beam on a second selected spot (122) on the patterning layer. The selected portion corresponds to a lithographic feature (116) and has a boundary (128) including a plurality of boundary segments defining a polygon. The energy beam is exposed on the first selected spot (118) at a first dosage, and at the second selected spot (122) at a second dosage that does not equal the first dosage. According to the present invention, a lithographic feature (116) is provided on the lithographic mask and includes a serif (126), a portion of which is provided by altering the dosage level at the second selected spot.

REFERENCES:
patent: 5885747 (1999-03-01), Yamasaki et al.
patent: 5885748 (1998-06-01), Ohnuma

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