Method for forming a linear field effect transistor

Details Method for forming a linear field effect transistor Method for forming a linear field effect transistor

1994-06-28

1995-04-11

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437133, 437912, 148DIG72, H01L 21265

Patent

active

054057930

ABSTRACT:
In one form of the invention, a field effect transistor is disclosed, the transistor comprising: a channel between a source and a drain, the channel comprising: a first region 22 of a first semiconductor material having a first doping concentration; a second region 20 of a second semiconductor material having a second doping concentration, the second region 20 lying above the first region 22; a third region 18 of the first semiconductor material having a third doping concentration, the third region lying above the second region 20, wherein the first doping concentration is higher than the second and third doping concentrations; and a gate electrode 12 lying above the third region 18, whereby an electrical current flows in the channel primarily in the first region 22 or primarily in the second region 20 by varying a voltage on the gate electrode 12.

REFERENCES:
patent: 5141879 (1992-08-01), Goronkin et al.
patent: 5151757 (1992-09-01), Enoki et al.
patent: 5234682 (1993-06-01), Tserng
patent: 5254492 (1993-10-01), Tseng et al.
patent: 5298441 (1994-03-01), Goronkin et al.
patent: 5322808 (1994-06-01), Brown et al.
patent: 5350936 (1994-09-01), Ikalainen et al.
R. E. Williams, et al., "Graded Channel FETs": Improved Linearity and Noise Figure, IEEE Transactions on Electron Devices, vol. Ed-25, No. 6, Jun. 1978, pp. 600-605.
S. L. G. Chu, et al., "A Highly Linear MESFET," IEEE MTT-S Digest, 1991, pp. 725-728.
P. K. Ikalainen, et al., "Low-Noise Low DC Power Linear FET" European Microwave Conference Proceedings, Aug. 1992, pp. 570-575.
P. K. Ikalainen, et al., "High Dynamic Range Microwave FET," Electronics Letters, vol. 27, No. 11, May 23, 1991, pp. 945-946.

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