Method for forming a lightly doped drain in a thin film...

Details Method for forming a lightly doped drain in a thin film... Method for forming a lightly doped drain in a thin film...

2007-01-16

2007-01-16

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making passive device

Resistor

C438S151000, C438S514000, C438S149000, C438S163000, C438S164000, C438S609000, C438S238000, C438S030000, C257S072000, C257SE21437

Reexamination Certificate

active

10862443

ABSTRACT:
In accordance with the present invention, a gate electrode structure with inclined planes is used as a mask when performing an ion implantation process. The inclined planes are used to define the lightly doped drain (LDD) region in the active area. Therefore, the width of the LDD can be defined by the geometry of the inclined planes.

REFERENCES:
patent: 2004/0126914 (2004-07-01), Chang et al.
patent: 2004/0185607 (2004-09-01), Shih et al.

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